![]() On the other hand, bulk materials remain more advantageous for practicalĭevice applications and have recently become the focus of many researchĪctivities, as the value of ZT can be improved considerably in materials 1− 5 However, in practice, the use of these nanomaterials is still limitedĭue to difficulties in fabrication, processing, and obtaining theĭesired mechanical strength, leading to low overall device efficiencies. Materials such as nanowires, quantum wells, and quantum dots can improve ZT signinficantly. Theoretical and experimental studies in low-dimensional thermal electric Values of ZT higher than 1 is still challenging. ![]() ![]() Large ZT valuesīut an increase in σ is accompanied by an increase in κ e, following the Wiedemann–Franzįor several years, considerable effort has been devoted Optimization of the figure of merit for a homogeneous ![]() Which is inversely proportional to the mass of the charge carriers), κ l is determined by the phonon dispersionĪnd phonon scattering. On the electronic band structure (through a dependence on the mobility, Σ is the electrical conductivity, and κ is the thermalĬonductivity, which includes electronic κ e and lattice κ l contributions
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